D&X excels in offering a professional wafer coating service, applying advanced techniques to enhance surface properties. Our dedicated partners employ precision methods, ensuring uniform and high-quality coatings for semiconductor wafers. Trust us for a sophisticated approach to wafer coating, meeting industry standards with precision and reliability.Our array of film deposition services includes:
- Thin Film Deposition
- Metal Film Deposition
- SiN Type Film Deposition
- EPI Type Film Deposition
And other film deposition services such as RESIST (Krf), LP-Poly, BPSG+Anneal, P-SION
Each type of film serves various purposes depending on the specific application and the types of material used. The process typically involves the following steps:
- Film Deposition: a thin layer of material is deposited onto the wafer’s surface. This can be achieved through various techniques such as chemical vapor deposition (CVD), physical vapor deposition (PVD), or spin coating.
- Material Selection: the choice of material for the film coating depends on the desired properties and functions. Our team at D&X will discuss your specific substrate requirement and use our best quality wafers for film deposition service, to offer you competitive pricing and faster delivery.
- Post-Processing: after the film is applied, additional steps such as annealing or curing may be performed to optimize the film’s properties.
Thin, film, Metal, Film other
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OVERALL INTRODUCTION, OUR CAPABILITY
D&X stands as your esteemed partner for bespoke solutions, delivering top-tier processing services encompassing thin film and metallisation, precision grinding and thinning, dicing, lithography, bumping, and bonding. Our commitment to excellence ensures the provision of high-quality services across a diverse range of materials. All tailored to meet your exacting specifications, and at a competitive price point.
SiO2
| Method | Film Types | Range (nm) | Tolerance | Uniformity |
|
Thermal
|
Wet Oxide | 50 ~ 20000 | ±10% | <5% |
| Dry Oxide | 20 ~ 400 | ±10% | <5% | |
| RTO | 1.8 ~ 20 | ±10% | <5% | |
| Radical Oxide | 2 ~ 11 | ±10% | <5% | |
|
CVD
|
P-SiO2 | 50 ~ 1000 | ±10% | <10% |
| LP-TEOS | 300 ~ 1000 | ±10% | <5% | |
| P-TEOS | 50 ~ 3000 | ±10% | <5% | |
| HDP | 200 ~ 1000 | ±10% | <10% | |
| O3-TEOS | 34 ~ 4000 | ±10% | <10% |
Metal Film
| Metalic | ||||
| Method | Film Types | Range (nm) | Tolerance | Uniformity |
|
PVD
|
Al-Cu | 100 ~ 1000 | ±10% | <5% |
| Cu | 50 ~ 600 | ±10% | <5% | |
| Al | 100 ~ 1200 | ±10% | <5% | |
| Ti | 10 ~ 300 | ±10% | <5% | |
| Ni, TiN | Ni: 5~200 // TiN: 5~130 | ±10% | <10% | |
| Ti, TaN | 2 ~ 11 | ±10% | <10% | |
| Ti, TiN | Ti: 5~20 // TiN: 5~50 | ±10% | <5% | |
|
CVD
|
W | 50 ~ 100 | ±10% | <10% |
| TiN | 14 ~ 50 | ±10% | <10% | |
| Ti, TiN | Ti: 1~20 // TiN: 1~50 | ±10% | <10% | |
SiN
| SiN | ||||
| Method | Film Types | Range (nm) | Tolerance | Uniformity |
|
CVD
|
LP-HCD SiN | 70 ~ 200 | ±10% | <10% |
| LP-DCS SiN | 70 ~ 200 | ±10% | <10% | |
| P-SiN | 50 ~ 1000 | ±10% | <10% | |
EPI
| EPI | |||
| EPI Types | Thickness (μm) | Tolerance | Uniformity |
| Silicon-Epi | 3 ~ 150 | ±10% | <10% |
|
SiC-Epi
|
0.2 ~ 200 (Silicon face), | ±10% |
<10%
|
| 0.2 ~ 10 (Carbon face) | ±15 ~ 25% | ||
| GaN-Epi | 3 ~ 100 | ±10% | <10% |
| Nitride-Epi | 0.001 ~ 3 | ±10% | <10% |
Others
| Others | ||||
| Method | Film Types | Thickness Range (nm) | Tolerance | Uniformity |
| Coater | RESIST (Krf) | 500 ~ 2700 | ±10% | <5% |
|
CVD
|
LP-Poly | 100 ~ 500 | ±10% | <5% |
| BPSG+Anneal | 300 ~ 1500 | ±10% | <10% | |
| P-SION | 20 ~ 100 | ±10% | <10% | |